Description

These IGBTs are developed using an advanced

proprietary trench gate field-stop structure and

performance is optimized in both conduction and

switching losses. A freewheeling diode with a low

drop forward voltage is co-packaged. The result is

a product specifically designed to maximize

efficiency for any resonant and soft-switching

application.

Features

• Designed for soft commutation only

• Maximum junction temperature: TJ = 175 °C

• Minimized tail current

• VCE(sat) = 2.0 V (typ.) @ IC = 25 A

• Tight parameters distribution

• Safe paralleling

• Low VF soft recovery co-packaged diode

• Low thermal resistance

• Lead free package

Applications

• Induction heating

• Microwave oven

• Resonant converters