Features

■ Low on-voltage drop (VCE(sat))

■ Operating junction temperature up to 175 °C

■ Low Cres / Cies ratio (no cross conduction

susceptibility)

■ Tight parameter distribution

■ Ultrafast soft-recovery antiparallel diode

■ Short-circuit rugged

Applications

■ Motor drives

■ High frequency inverters

■ SMPS and PFC in both hard switch and

resonant topologies

Description

This IGBT utilizes the advanced PowerMESH™

process resulting in an excellent trade-off

between switching performance and low on-state

behavior.