Description

This device is an N-channel Zener-protected

Power MOSFET developed using

STMicroelectronics’ SuperMESH™ technology,

achieved through optimization of ST’s well

established strip-based PowerMESH™ layout. In

addition to a significant reduction in onresistance, this device is designed to ensure a

high level of dv/dt capability for the most

demanding applications.

Features

■ Extremely high dv/dt capability

■ 100 avalanche tested

■ Gate charge minimized

■ Very low intrinsic capacitance

Applications

■ Switching application