DESCRIPTION

This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.019 Ω

■ 100 AVALANCHE TESTED

■ LOW GATE CHARGE

■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SOLENOID AND RELAY DRIVERS

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ DC-DC & DC-AC CONVERTERS IN HIGH PERFORMANCE VRMs

■ AUTOMOTIVE ENVIRONMENT(INJECTION, ABS, AIR-BG, LAMPDRIVERS, Etc.)