DESCRIPTION

The LET20030S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2 GHz. LET20030S boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. LET20030S’s superior linearity performance makes it an ideal solution for base station applications.

Designed for GSM / EDGE / IS-97 applications

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• POUT = 30 W with 11 dB gain @ 2000 MHz

• ESD PROTECTION

• IS-97 CDMA PERFORMANCES

POUT = 4.5 W

EFF = 17