DESCRIPTION

ST3414 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package.

FEATURE

● 20V/4.2A, RDS(ON) = 40mΩ ( Typ.) @VGS = 4.5V

● 20V/3.4A, RDS(ON) = 55 mΩ @VGS = 2.5V

● 20V/2.8A, RDS(ON) = 75 mΩ @VGS = 1.8V

● Super high density cell design for extremely low RDS(ON)

● Exceptional on-resistance and maximum DC current capability

● SOT-23-3L package design