DESCRIPTION

ST2305A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package.

FEATURE

● -15V/-3.5A, RDS(ON) = 45m-ohm (Typ.) @VGS = -4.5V

● -15V/-3.0A, RDS(ON) = 55m-ohm @VGS = -2.5V

● -15V/-2.0A, RDS(ON)= 90m-ohm @VGS=-1.8V

● Super high density cell design for extremely low RDS(ON)

● Exceptional on-resistance and maximum DC current capability

● SOT-23-3L package design