DESCRIPTION

ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package.

FEATURE

● 30V/3.2A, RDS(ON) = 44m-ohm (Typ.) @VGS = 10.0V

● 30V/2.0A, RDS(ON) = 60m-ohm @VGS = 4.5V

● 30V/1.5A, RDS(ON) =90 m-ohm @VGS = 2.5V

● Super high density cell design for extremely low RDS(ON)

● Exceptional on-resistance and maximum DC current capability

● SOT-23 package design