DESCRIPTION

The ST2302M is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package.

FEATURE

● 20V/3.6A, RDS(ON) = 90m-ohm (Typ.) @VGS = 4.5V

● 20V/3.1A, RDS(ON) = 130m-ohm @VGS = 2.5V

● Super high density cell design for extremely low RDS(ON)

● Exceptional on-resistance and maximum DC current capability

● SOT-23 package design