DESCRIPTION

The ST2301M is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package.

FEATURE

● -20V/-2.8A, RDS(ON) = 130m-ohm (Typ.) @VGS = -4.5V

● -20V/-2.0A, RDS(ON) = 220m-ohm @VGS = -2.5V

● Super high density cell design for extremely low RDS(ON)

● Exceptional on-resistance and maximum DC current capability

● SOT-23 package design