位置:LH28F320BFHG-PTTLZM > LH28F320BFHG-PTTLZM详情

LH28F320BFHG-PTTLZM中文资料

厂家型号

LH28F320BFHG-PTTLZM

文件大小

913.75Kbytes

页面数量

37

功能描述

32M (x16) Flash Memory

32M(x16) Flash Memory

数据手册

下载地址一下载地址二到原厂下载

简称

SHARP夏普

生产厂商

Sharp Corporation

中文名称

官网

LH28F320BFHG-PTTLZM数据手册规格书PDF详情

The product, which is 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, low cost, nonvolatile read/write storage solution for a wide range of applications. The product can operate at VCC=2.7V-3.6V and VPP=1.65V-3.6V or 11.7V-12.3V. Its low voltage operation capability greatly extends battery life for portable applications.

32Mbit (2Mbit×16) Page Mode Dual Work Flash MEMORY

■ 32M density with 16Bit I/O Interface

■ High Performance Reads

• 70/25ns 8-Word Page Mode

■ Configurative 4-Plane Dual Work

• Flexible Partitioning

• Read operations during Block Erase or (Page Buffer) Program

• Status Register for Each Partition

■ Low Power Operation

• 2.7V Read and Write Operations

• VCCQ for Input/Output Power Supply Isolation

• Automatic Power Savings Mode Reduces ICCR in Static Mode

■ Enhanced Code + Data Storage

• 5µs Typical Erase/Program Suspends

■ OTP (One Time Program) Block

• 4-Word Factory-Programmed Area

• 4-Word User-Programmable Area

■ High Performance Program with Page Buffer

• 16-Word Page Buffer

• 5µs/Word (Typ.) at 12V VPP

■ Operating Temperature -40°C to +85°C

■ CMOS Process (P-type silicon substrate)

■ Flexible Blocking Architecture

• Eight 4K-word Parameter Blocks

• Sixty-three 32K-word Main Blocks

• Top Parameter Location

■ Enhanced Data Protection Features

• Individual Block Lock and Block Lock-Down with Zero-Latency

• All blocks are locked at power-up or device reset.

• Absolute Protection with VPP ≤ VPPLK

• Block Erase, Full Chip Erase, (Page Buffer) Word Program Lockout during Power Transitions

■ Automated Erase/Program Algorithms

• 3.0V Low-Power 11µs/Word (Typ.) Programming

• 12V No Glue Logic 9µs/Word (Typ.)

■ Production Programming and 0.5s Erase (Typ.)

■ Cross-Compatible Command Support

• Basic Command Set

• Common Flash Interface (CFI)

■ Extended Cycling Capability

• Minimum 100,000 Block Erase Cycles

■ 0.75mm pitch 48-Ball CSP (7mm×7mm)

■ ETOX™* Flash Technology

■ Not designed or rated as radiation hardened

LH28F320BFHG-PTTLZM产品属性

  • 类型

    描述

  • 型号

    LH28F320BFHG-PTTLZM

  • 制造商

    SHARP

  • 制造商全称

    Sharp Electrionic Components

  • 功能描述

    32M(x16) Flash Memory

更新时间:2026-8-19 17:04:00
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