The product, which is 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, low cost, nonvolatile read/write storage solution for a wide range of applications. The product can operate at VCC=2.7V-3.6V. Its low voltage operation capability greatly extends battery life for portable applications.

32Mbit (2Mbit×16) Page Mode Dual Work Flash MEMORY

■ 32M density with 16Bit I/O Interface

■ High Performance Reads

• 60/25ns 8-Word Page Mode

■ Configurative 4-Plane Dual Work

• Flexible Partitioning

• Read operations during Block Erase or (Page Buffer) Program

• Status Register for Each Partition

■ Low Power Operation

• 2.7V Read and Write Operations

• Automatic Power Savings Mode Reduces ICCR in Static Mode

■ Enhanced Code + Data Storage

• 5µs Typical Erase/Program Suspends

■ OTP (One Time Program) Block

• 4-Word Factory-Programmed Area

• 4-Word User-Programmable Area

■ High Performance Program with Page Buffer

• 16-Word Page Buffer

• 5µs/Word (Typ.) at 12V WP#/ACC

■ Operating Temperature 0°C to +70°C

■ CMOS Process (P-type silicon substrate)

■ Flexible Blocking Architecture

• Eight 4K-word Parameter Blocks

• Sixty-three 32K-word Main Blocks

• Bottom Parameter Location

■ Enhanced Data Protection Features

• Individual Block Lock and Block Lock-Down with Zero-Latency

• All blocks are locked at power-up or device reset.

• Block Erase, Full Chip Erase, (Page Buffer) Word Program Lockout during Power Transitions

Automated Erase/Program Algorithms

• 3.0V Low-Power 11µs/Word (Typ.)

Programming

• 12V No Glue Logic 9µs/Word (Typ.)

Production Programming and 0.5s Erase (Typ.)

■ Cross-Compatible Command Support

• Basic Command Set

• Common Flash Interface (CFI)

■ Extended Cycling Capability

• Minimum 100,000 Block Erase Cycles

■ 48-Lead TSOP

■ ETOXTM* Flash Technology

■ Not designed or rated as radiation hardened