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LH28F320BFHE-PBTLZ2中文资料

厂家型号

LH28F320BFHE-PBTLZ2

文件大小

897.31Kbytes

页面数量

36

功能描述

32M (x16) Flash Memory

32M(x16) Flash Memory

数据手册

下载地址一下载地址二

简称

SHARP夏普微

生产厂商

Sharp Microelectronics of the Americas (SMA)

中文名称

美国夏普微电子公司(SMA)官网

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LH28F320BFHE-PBTLZ2数据手册规格书PDF详情

32M (x16) Flash Memory

The product, which is 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, low cost, nonvolatile read/write storage solution for a wide range of applications. The product can operate at VCC=2.7V-3.6V and VPP=1.65V-3.6V or 11.7V-12.3V. Its low voltage operation capability greatly extends battery life for portable applications.

32Mbit (2Mbit×16) Page Mode Dual Work Flash MEMORY

■ 32M density with 16Bit I/O Interface

■ High Performance Reads

• 80/35ns 8-Word Page Mode

■ Configurative 4-Plane Dual Work

• Flexible Partitioning

• Read operations during Block Erase or (Page Buffer) Program

• Status Register for Each Partition

■ Low Power Operation

• 2.7V Read and Write Operations

• VCCQ for Input/Output Power Supply Isolation

• Automatic Power Savings Mode Reduces ICCR in Static Mode

■ Enhanced Code + Data Storage

• 5µs Typical Erase/Program Suspends

■ OTP (One Time Program) Block

• 4-Word Factory-Programmed Area

• 4-Word User-Programmable Area

■ High Performance Program with Page Buffer

• 16-Word Page Buffer

• 5µs/Word (Typ.) at 12V VPP

■ Operating Temperature -40°C to +85°C

■ CMOS Process (P-type silicon substrate)

■ Flexible Blocking Architecture

• Eight 4K-word Parameter Blocks

• Sixty-three 32K-word Main Blocks

• Bottom Parameter Location

■ Enhanced Data Protection Features

• Individual Block Lock and Block Lock-Down with

■ Zero-Latency

• All blocks are locked at power-up or device reset.

• Absolute Protection with VPP≤VPPLK

• Block Erase, Full Chip Erase, (Page Buffer) Word

■ Program Lockout during Power Transitions

■ Automated Erase/Program Algorithms

• 3.0V Low-Power 11µs/Word (Typ.)

Programming

• 12V No Glue Logic 9µs/Word (Typ.)

Production Programming and 0.5s Erase (Typ.)

■ Cross-Compatible Command Support

• Basic Command Set

• Common Flash Interface (CFI)

■ Extended Cycling Capability

• Minimum 100,000 Block Erase Cycles

■ 48-Lead TSOP

■ ETOXTM* Flash Technology

■ Not designed or rated as radiation hardened

LH28F320BFHE-PBTLZ2产品属性

  • 类型

    描述

  • 型号

    LH28F320BFHE-PBTLZ2

  • 制造商

    SHARP

  • 制造商全称

    Sharp Electrionic Components

  • 功能描述

    32M(x16) Flash Memory

更新时间:2025-6-20 14:06:00
供应商 型号 品牌 批号 封装 库存 备注 价格
SHARP
10+
TSOP
1893
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SHARP
23+
TSOP48
20000
全新原装假一赔十
SHARP
23+
TSOP
8560
受权代理!全新原装现货特价热卖!
SHARP
2023+
TSOP48
50000
原装现货
SHARP
23+
TSOP
1893
全新原装正品现货,支持订货
SHARP
20+
TSOP
1893
进口原装现货,假一赔十
SHARP
24+
TSOP48
4650
SHARP
TSOP48
739
全新原装进口自己库存优势
SHARP
2015+
TSOP48
19889
一级代理原装现货,特价热卖!
SHARP
2016+
TSOP
6528
只做进口原装现货!或订货,假一赔十!

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Sharp Microelectronics of the Americas (SMA) 美国夏普微电子公司(SMA)

中文资料: 4220条

SharpMicroelectronicsoftheAmericas(SMA)为市场提供创新型LCD、光电子器件、存储器、成像仪和射频元件产品。全球众多领先的消费类和商务技术产品制造商依赖SMA为他们提供所需的产品、专业技术和全球支持,帮助他们实现愿景。SMA位于美国华盛顿的Camas,是SharpCorporation全资子公司SharpElectronicsCorporation的微电子销售和市场营销部。