DESCRIPTION

The LH28F160BG-TL/BGH-TL flash memories with Smart 3 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F160BG-TL/BGH-TL can operate at VCC and VPP = 2.7 V.

FEATURES

• Smart 3 technology

– 2.7 to 3.6 V VCC

– 2.7 to 3.6 V or 12 V VPP

• High performance read access time LH28F160BG-TL10/BGH-TL10

– 100 ns (2.7 to 3.6 V) LH28F160BG-TL12/BGH-TL12

– 120 ns (2.7 to 3.6 V)

• Enhanced automated suspend options

– Word write suspend to read

– Block erase suspend to word write

– Block erase suspend to read

• SRAM-compatible write interface

• Optimized array blocking architecture

– Two 4 k-word boot blocks

– Six 4 k-word parameter blocks

– Thirty-one 32 k-word main blocks

– Top or bottom boot location

• Enhanced cycling capability

– 100 000 block erase cycles

• Low power management

– Deep power-down mode

– Automatic power saving mode decreases ICC in static mode

• Automated word write and block erase

– Command user interface

– Status register

• ETOXTM∗ V nonvolatile flash technology

• Packages

– 48-pin TSOP Type I (TSOP048-P-1220) Normal bend/Reverse bend

– 60-ball CSP (FBGA060/048-P-0811)