INTRODUCTION

Sharp’s LH28F040SUTD-Z4 4M Flash Memory is a revolutionary architecture which enables the design of truly mobile, high performance, personal computing and communication products. With innovative capabilities, 3.3 V low power operation and very high read/write performance, the LH28040SU-Z4 is also the ideal choice for designing embedded mass storage flash memory systems.

FEATURES

• 512K × 8 Bit Configuration

• 5 V Write/Erase Operation (5 V VPP, 3.3 VCC)

– VCC for Write/Erase at as low as 2.9 V

• Min. 2.7 V Read Capability

– 190 ns Maximum Access Time (VCC = 2.7 V)

• 2 Banks Enable the Simultaneous Read/Write/Erase Operation

• 32 Independently Lockable Blocks (16K)

• 100,000 Erase Cycles per Block

• Automated Byte Write/Block Erase

– Command User Interface

– Status Register

• System Performance Enhancement

– Erase Suspend for Read

– Two-Byte Write

– Bank Erase

• Data Protection

– Hardware Erase/Write Lockout during Power Transitions

– Software Erase/Write Lockout

• Independently Lockable for Write/Erase on Each Block (Lock Block and Protect Set/Reset)

• 20 µA (Maximum) ICC in CMOS Standby

• State-of-the-Art 0.55 µm ETOX™ Flash Technology

• 40-Pin, 1.2 mm × 10 mm × 20 mm TSOP (Type I) Package