INTRODUCTION

Sharp’s LH28F020SU-N 2M Flash Memory is a revolutionary architecture which enables the design of truly mobile, high performance, personal computing and communication products. With innovative capabilities, 5.0 V single voltage operations and very high read/write performance, the LH28F020SU-N is also the ideal choice for designing embedded mass storage flash memory systems.

FEATURES

• 256K × 8 Bit Configuration

• 5 V Write/Erase Operation (5 V VPP)

– No Requirement for DC/DC Converter to Write Erase

• 80 ns Maximum Access Time

• 16 Independently Lockable Blocks (16K)

• 100,000 Erase Cycles per Block

• Automated Byte Write/Block Erase

– Command User Interface

– Status Register

• System Performance Enhancement

– Erase Suspend for Read

– Two-Byte Write

– Full Chip Erase

• Data Protection

– Hardware Erase/Write Lockout during Power Transitions

– Software Erase/Write Lockout

• Independently Lockable for Write/Erase on Each Block (Lock Block and Protect Set/Reset)

• 5 µA (TYP.) ICC in CMOS Standby

• State-of-the-Art 0.55 µm ETOX™ Flash Technology

• Packages

– 32-Pin, 525 mil. SOP Package

– 32-Pin, 1.2 mm × 8 mm × 20 mm TSOP (Type I) Package