POWER TRANSISTORS 5 AMPERES 700 VOLTS 75 WATTS

High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network The BUL45D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time

POWER TRANSISTORS 5 AMPERES 700 VOLTS 75 WATTS

The BUD45D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window. Main features: • Low

High Speed, High Gain Bipolar NPN Power Transistor

High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network The BUL45D2G is state−of−art High Speed High gain BiPolar transistor (H2BIP). High dynamic characteristics and lot−to−lot minimum spread (±150 ns on storage ti

High Speed, High Gain Bipolar NPN Power Transistor

文件：227.88 Kbytes Page：11 Pages

High Speed, High Gain Bipolar NPN Power Transistor

文件：227.88 Kbytes Page：11 Pages