SURFACE MOUNT SILICON ZENER DIODES

FEATURES : * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free

SURFACE MOUNT SILICON ZENER DIODES

FEATURES : * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free

SURFACE MOUNT SILICON ZENER DIODES

FEATURES * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current

Complete Voltage Range 3.3 to 200 Volts

Features • Complete Voltage Range 3.3 to 200 Volts • High peak reverse power dissipation • High reliability • Low leakage current • RoHS compliant package

Surface Mount Silicon Zener Diodes

VZ : 3.3 - 200 Volts PD : 1 Watt Features ♦ Complete Voltage Range 3.3 to 200 Volts ♦ High peak reverse power dissipation ♦ High reliability ♦ Low leakage current ♦ Pb / RoHS Free

SURFACE MOUNT SILICON ZENER DIODES

Features ● Complete Voltage Range 3.3 to 300 Volts ● High peak reverse power dissipation ● High reliability ● Low leakage current

1W 7.5V Zener diode

文件：526.453 Kbytes Page：2 Pages

SURFACE MOUNT SILICON ZENER DIODES

文件：529.857 Kbytes Page：2 Pages

SURFACE MOUNT SILICON ZENER DIODES

文件：52.3 Kbytes Page：2 Pages

Surface Mount Zener diode

ZENER DIODES

文件：2.01679 Mbytes Page：14 Pages

TMOS Switching(N-Channel-Enhancement)

TMOS Switching N–Channel — Enhancement

TMOS Switching(N-Channel-Enhancement)

TMOS Switching N–Channel — Enhancement

HIGH EFFICIENCY RECTIFIERS(1.0A,600-1000V)

Switchmode Power Rectifiers . . . Designed for use in switching power supplies. These state-of-the-art devices have the fllowing features: * High Surge Capacity * Low Power Loss, High efficiency. * Glass Passivated chip junctions * 150°C Operating Junction Temperature * Low Stored Charge

SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V)

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and

POWER TRANSISTORS(8A,60-100V,80W)

8 Ampere DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 80 WATTS TIP100,TIP101,TIP102 --> NPN TIP105,TIP106,TIP107 --> PNP