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TIP107晶体管资料

  • TIP107别名:TIP107三极管、TIP107晶体管、TIP107晶体三极管

  • TIP107生产厂家:美国摩托罗拉半导体公司

  • TIP107制作材料:Si-P+Darl+Di

  • TIP107性质:低频或音频放大 (LF)_功率放大 (L)_开关管 (S

  • TIP107封装形式:直插封装

  • TIP107极限工作电压:100V

  • TIP107最大电流允许值:8A

  • TIP107最大工作频率:<1MHZ或未知

  • TIP107引脚数:3

  • TIP107最大耗散功率:80W

  • TIP107放大倍数:β>1000

  • TIP107图片代号:B-10

  • TIP107vtest:100

  • TIP107htest:999900

  • TIP107atest:8

  • TIP107wtest:80

  • TIP107代换 TIP107用什么型号代替:BD646,BD898,BDW74A...D,BDX54A...F,3CA10,

TIP107价格

参考价格:¥1.3461

型号:TIP107 品牌:STMICROELECTRONICS 备注:这里有TIP107多少钱,2026年最近7天走势,今日出价,今日竞价,TIP107批发/采购报价,TIP107行情走势销售排行榜,TIP107报价。
型号 功能描述 生产厂家 企业 LOGO 操作
TIP107

PNP Epitaxial Silicon Darlington Transistor

Monolithic Construction With Built In Base Emitter Shunt Resistors • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) • Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP100/101/102

FAIRCHILD

仙童半导体

TIP107

PNP Epitaxial Silicon Darlington Transistor

Monolithic Construction With Built In Base Emitter Shunt Resistors • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) • Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP100/101/102

FAIRCHILD

仙童半导体

TIP107

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium−Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features •High DC Current Gain −hFE = 2500 (Typ) @ IC= 4.0 Adc •Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus)= 60 Vdc (Min) −

ONSEMI

安森美半导体

TIP107

Monolithic Construction With Built In Base- Emitter Shunt Resistors

Monolithic Construction With Built In Base Emitter Shunt Resistors • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) • Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP100/101/102

FAIRCHILD

仙童半导体

TIP107

Power Darlingtons for Linear and Switching Applications

TIP100, 101, 102 NPN PLASTIC POWER TRANSISTORS TIP105, 106, 107 PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications

BOCA

博卡

TIP107

PNP EPITAXIAL TRANSISTOR

DESCRIPTION The UTC TIP107 is designed for using in general purpose amplifier and switching applications. FEATURES * Low VCE(SAT) * High Current Gain * Complementary to TIP102

UTC

友顺

TIP107

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS Intended for use in Linear Switching Applications

CDIL

TIP107

PNP Plastic Medium-Power Silicon Transistors

Features • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain : hFE=2500 (Typ) @ IC=4.0Adc • Low Collector-Emitter Saturation Voltage • Monolithic Construction with Built-in Base-Emitter Shunt Resistors • TO-220 Compac

MCC

TIP107

POWER TRANSISTORS(8A,60-100V,80W)

8 Ampere DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 80 WATTS TIP100,TIP101,TIP102 --> NPN TIP105,TIP106,TIP107 --> PNP

MOSPEC

统懋

TIP107

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60– 80– 100 VOLTS 80 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —hFE= 2500 (Typ) @ IC= 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc

MOTOROLA

摩托罗拉

TIP107

isc Silicon PNP Power Transistor

DESCRIPTION ·Low saturation voltage. ·High reliability ·High breakdown voltage APPLICATIONS ·High-Voltage Switching

ISC

无锡固电

TIP107

PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS

8 Ampere DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 80 WATTS TIP100,TIP101,TIP102 --> NPN TIP105,TIP106,TIP107 --> PNP

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

TIP107

PNP SILICON POWER DARLINGTONS

● Designed for Complementary Use with TIP100, TIP101 and TIP102 ● 80 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Maximum VCE(sat) of 2.5 V at IC = 8 A

POINN

TIP107

Silicon PNP Darlington Power Transistors

DESCRIPTION • With TO-220C package • DARLINGTON • High DC current gain • Low collector saturation voltage • Complement to type TIP100/101/102 APPLICATIONS • For industrial use

SAVANTIC

TIP107

Monolithic Construction With Built In Base-Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP100/101/102

SEMIHOW

TIP107

Darlington Power Transistors (PNP)

Darlington Power Transistors (PNP) Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant

TAITRON

TIP107

PNP SILICON POWER DARLINGTONS

TIP100,TIP101,TIP102 --> NPN TIP105,TIP106,TIP107 --> PNP

TRSYS

Transys Electronics

TIP107

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The TIP102 is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP type is TIP107. Also TIP105 is a PNP type. ■ STMicroelectro

STMICROELECTRONICS

意法半导体

TIP107

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS Intended for use in Linear Switching Applications

TEL

TIP107

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are designed for general purpose amplifier and low-speed switching applications. NPN complements are TIP100-101-102 Compliance to RoHS.

COMSET

TIP107

8.0 A,100 V,PNP 达林顿双极功率晶体管

The Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low speed switching applications. The TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP) are complementary devices. • High DC Current Gain -hFE = 2500 (typ) @ IC = 4.0 mAdc\n• Collector-Emitter Sustaining Voltage--@ 30 mAdcVCEO(sus) = 60 Vdc (Min)-TIP100, TIP105VCEO(sus) = 80 Vdc (Min)-TIP101, TIP106VCEO(sus) = 100 Vdc (Min)-TIP102, TIP107\n• Low Collector-Emitter Saturation VoltageVCE(sat) = 2.0 Vdc(Max) @ IC= 3;

ONSEMI

安森美半导体

TIP107

isc Silicon PNP Darlington Power Transistor

文件:143.05 Kbytes Page:3 Pages

ISC

无锡固电

TIP107

Silicon PNP Darlington Power Transistors

文件:134.01 Kbytes Page:3 Pages

ISC

无锡固电

TIP107

封装/外壳:TO-220-3 包装:散装 描述:TRANS PNP DARL 100V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

TIP107

封装/外壳:TO-220-3 包装:散装 描述:TRANS PNP DARL 100V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICS

意法半导体

TIP107

中等功率双极型晶体管

MCC

TIP107

Darlington Transistor

UTC

友顺

TIP107

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

文件:91.74 Kbytes Page:4 Pages

STMICROELECTRONICS

意法半导体

TIP107

Silicon PNP Darlington Power Transistors

文件:95.19 Kbytes Page:3 Pages

SAVANTIC

TIP107

TO-220 - Power Transistors and Darlingtons

文件:76.15 Kbytes Page:3 Pages

RECTRON

丽正

TIP107

PNP Plastic Medium-Power Silicon Transistors

文件:331.46 Kbytes Page:4 Pages

MCC

TIP107

Silicon Power darlington Complementary transistors

文件:70.63 Kbytes Page:1 Pages

CENTRAL

TIP107

Plastic Medium-Power Complementary Silicon Transistors

文件:138.03 Kbytes Page:7 Pages

ONSEMI

安森美半导体

TIP107

PNP EPITAXIAL TRANSISTOR

文件:168.35 Kbytes Page:4 Pages

UTC

友顺

TIP107

Plastic Medium?뭁ower Complementary Silicon Transistors

文件:87.6 Kbytes Page:7 Pages

ONSEMI

安森美半导体

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS Intended for use in Linear Switching Applications

CDIL

PNP Epitaxial Silicon Darlington Transistor

Monolithic Construction With Built In Base Emitter Shunt Resistors • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) • Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP100/101/102

FAIRCHILD

仙童半导体

PNP EPITAXIAL TRANSISTOR

文件:168.35 Kbytes Page:4 Pages

UTC

友顺

PNP EPITAXIAL TRANSISTOR

文件:203.23 Kbytes Page:4 Pages

UTC

友顺

Plastic Medium-Power Complementary Silicon Transistors

文件:138.03 Kbytes Page:7 Pages

ONSEMI

安森美半导体

Plastic Medium?뭁ower Complementary Silicon Transistors

文件:87.6 Kbytes Page:7 Pages

ONSEMI

安森美半导体

PNP EPITAXIAL TRANSISTOR

文件:203.23 Kbytes Page:4 Pages

UTC

友顺

PNP EPITAXIAL TRANSISTOR

文件:203.23 Kbytes Page:4 Pages

UTC

友顺

PNP EPITAXIAL TRANSISTOR

文件:168.35 Kbytes Page:4 Pages

UTC

友顺

PNP EPITAXIAL TRANSISTOR

文件:203.23 Kbytes Page:4 Pages

UTC

友顺

PNP EPITAXIAL TRANSISTOR

文件:203.23 Kbytes Page:4 Pages

UTC

友顺

PNP EPITAXIAL TRANSISTOR

文件:203.23 Kbytes Page:4 Pages

UTC

友顺

PNP EPITAXIAL TRANSISTOR

文件:168.35 Kbytes Page:4 Pages

UTC

友顺

PNP EPITAXIAL TRANSISTOR

文件:203.23 Kbytes Page:4 Pages

UTC

友顺

PNP EPITAXIAL TRANSISTOR

文件:203.23 Kbytes Page:4 Pages

UTC

友顺

PNP EPITAXIAL TRANSISTOR

文件:168.35 Kbytes Page:4 Pages

UTC

友顺

PNP EPITAXIAL TRANSISTOR

文件:203.23 Kbytes Page:4 Pages

UTC

友顺

PNP EPITAXIAL TRANSISTOR

文件:203.23 Kbytes Page:4 Pages

UTC

友顺

PNP EPITAXIAL TRANSISTOR

文件:203.23 Kbytes Page:4 Pages

UTC

友顺

PNP EPITAXIAL TRANSISTOR

文件:168.35 Kbytes Page:4 Pages

UTC

友顺

PNP EPITAXIAL TRANSISTOR

文件:168.35 Kbytes Page:4 Pages

UTC

友顺

PNP EPITAXIAL TRANSISTOR

文件:168.35 Kbytes Page:4 Pages

UTC

友顺

TMOS Switching(N-Channel-Enhancement)

TMOS Switching N–Channel — Enhancement

MOTOROLA

摩托罗拉

TMOS Switching(N-Channel-Enhancement)

TMOS Switching N–Channel — Enhancement

MOTOROLA

摩托罗拉

HIGH EFFICIENCY RECTIFIERS(1.0A,600-1000V)

Switchmode Power Rectifiers . . . Designed for use in switching power supplies. These state-of-the-art devices have the fllowing features: * High Surge Capacity * Low Power Loss, High efficiency. * Glass Passivated chip junctions * 150°C Operating Junction Temperature * Low Stored Charge

MOSPEC

统懋

TIP107产品属性

  • 类型

    描述

  • Marketing Status:

    Active

  • Grade:

    Industrial

  • Transistor Polarity:

    PNP

  • Collector-Emitter Voltage_max(V):

    100

  • Collector-Base Voltage_max(V):

    100

  • Collector Current_abs_max(A):

    8

  • Dc Current Gain_min:

    1000

  • Dc Current Gain_max:

    20000

  • Test Condition for hFE (IC):

    3

  • Test Condition for hFE (VCE)_spec(V):

    4

  • VCE(sat)_max(V):

    2

  • Test Condition for VCE(sat) - IC:

    3

  • Test Condition for VCE(sat) - IB_spec(mA):

    6

更新时间:2026-5-13 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
24+
TO-220
942
原厂订货渠道,支持BOM配单一站式服务
ONSEMI/安森美
25+
TO220
20300
ONSEMI/安森美原装特价TIP107G即刻询购立享优惠#长期有货
ST
24+
TO-220-3
20000
原装正品支持实单
ON/安森美
11+
TO-220
44
只做原装正品
ST(意法)
25+
TO-220(TO-220-3)
18798
原装正品现货,原厂订货,可支持含税原型号开票。
ST
22+
T0220-3
34365
原装正品,实单请联系
ST
21+
TO220
2863
十年信誉,只做原装,有挂就有现货!
ST/意法
2025+
TO-220-3
3400
原装进口价格优 请找坤融电子!
ST
2025+
N/A
70000
柒号只做原装 现货价秒杀全网
ON(安森美)
23+
TO-220
14235
公司只做原装正品,假一赔十

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