SURFACE MOUNT SILICON ZENER DIODES

FEATURES : * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free

SURFACE MOUNT SILICON ZENER DIODES

FEATURES : * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free

Surface Mount Silicon Zener Diodes

VZ : 3.3 - 200 Volts PD : 1 Watt Features ♦ Complete Voltage Range 3.3 to 200 Volts ♦ High peak reverse power dissipation ♦ High reliability ♦ Low leakage current ♦ Pb / RoHS Free

SURFACE MOUNT SILICON ZENER DIODES

FEATURES * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current

Complete Voltage Range 3.3 to 200 Volts

Features • Complete Voltage Range 3.3 to 200 Volts • High peak reverse power dissipation • High reliability • Low leakage current • RoHS compliant package

SURFACE MOUNT SILICON ZENER DIODES

Features ● Complete Voltage Range 3.3 to 300 Volts ● High peak reverse power dissipation ● High reliability ● Low leakage current

1W 47V Zener diode

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SURFACE MOUNT SILICON ZENER DIODES

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ZENER DIODES

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SURFACE MOUNT SILICON ZENER DIODES

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Zener Diode

Zener Diodes

Surface Mount Zener diode

RECORDING Y/C AMPLIFIER

Description CXA1047M is a bipolar IC developed to process the recording signals (luminance/chroma signals) of 8mm videos.

Dual-Band 3V Power Amplifier for GSM900/DCS1800 Applications

Description The CXG1047FN dual band GaAs PA is a 3-stage power amplifier that may be used for both GSM900 and DCS1800 applications. To achieve minimum die-size and package dimensions, it contains one amplifier chain with a single input and output. The PA has a single RF input for both the GSM900

NPN SILICON POWER (SWITCHING) TRANSISTOR

FEATURES * 2W POWER DISSIPATION * 20A Peak Pulse Current * Excellent HFE Characteristics up to 20 Amps * Extremely Low Saturation Voltage E.g. 25mv Typ. * Extremely Low Equivalent On-resistance; RCE(sat) 40mΩ at 4A

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * VCEO = 10V * 5 Amp Continuous Current * 20 Amp Pulse Current * Low Saturation Voltage * High Gain * Extremely Low Equivalent On-resistance; RCE(sat) = 44mΩ at 5A

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * Very Low Saturation Voltage * High Gain * 4 Amp Continuous Current APPLICATIONS * DC-DC Convertors * Power Management - Supply Switching