NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * VCEO = 10V * 5 Amp Continuous Current * 20 Amp Pulse Current * Low Saturation Voltage * High Gain * Extremely Low Equivalent On-resistance; RCE(sat) = 44mΩ at 5A

SOT223 NPN SILICON PLANAR

Features ● BVCEO > 10V ● IC = 5A High Continuous Collector Current ● ICM = 20A Peak Pulse Current ● Low Saturation Voltage VCE(sat)

NPN Silicon Planar Medium Power High Gain Transistor

Features ● VCEO = 10V. ● 5 Amp continuous current. ● 20 Amp pulse current. ● Low saturation voltage. ● High gain. ● Extremely low equivalent on-resistance; RCE(sat) = 44mΩ at 5A.

NPN, 10V, 5A, SOT223

SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

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10V NPN MEDIUM POWER HIGH GAIN TRANSISTOR

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封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 10V 5A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR） 描述：TRANS NPN 10V 5A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

RECORDING Y/C AMPLIFIER

Description CXA1047M is a bipolar IC developed to process the recording signals (luminance/chroma signals) of 8mm videos.

Dual-Band 3V Power Amplifier for GSM900/DCS1800 Applications

Description The CXG1047FN dual band GaAs PA is a 3-stage power amplifier that may be used for both GSM900 and DCS1800 applications. To achieve minimum die-size and package dimensions, it contains one amplifier chain with a single input and output. The PA has a single RF input for both the GSM900

NPN SILICON POWER (SWITCHING) TRANSISTOR

FEATURES * 2W POWER DISSIPATION * 20A Peak Pulse Current * Excellent HFE Characteristics up to 20 Amps * Extremely Low Saturation Voltage E.g. 25mv Typ. * Extremely Low Equivalent On-resistance; RCE(sat) 40mΩ at 4A

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * Very Low Saturation Voltage * High Gain * 4 Amp Continuous Current APPLICATIONS * DC-DC Convertors * Power Management - Supply Switching