N-channel MOSFET

文件：815.82 Kbytes Page：7 Pages

初级开关MOS管

丝印代码：SW7N65DA；N-channel Enhanced mode TO-251N/TO-262N/TO-252 MOSFET

Features  High ruggedness  Low RDS(ON) (Typ 1.4Ω)@VGS=10V  Low Gate Charge (Typ 25nC)  Improved dv/dt Capability  100 Avalanche Tested  Application: LED , Charge, PC Power

丝印代码：SW7N65DA；N-channel Enhanced mode TO-251N/TO-262N/TO-252 MOSFET

Features  High ruggedness  Low RDS(ON) (Typ 1.4Ω)@VGS=10V  Low Gate Charge (Typ 25nC)  Improved dv/dt Capability  100 Avalanche Tested  Application: LED , Charge, PC Power

丝印代码：SW7N65DA；N-channel Enhanced mode TO-251N/TO-262N/TO-252 MOSFET

Features  High ruggedness  Low RDS(ON) (Typ 1.4Ω)@VGS=10V  Low Gate Charge (Typ 25nC)  Improved dv/dt Capability  100 Avalanche Tested  Application: LED , Charge, PC Power

N-channel Enhanced mode TO-251N/TO-262N/TO-252 MOSFET

Features  High ruggedness  Low RDS(ON) (Typ 1.4Ω)@VGS=10V  Low Gate Charge (Typ 25nC)  Improved dv/dt Capability  100 Avalanche Tested  Application: LED , Charge, PC Power

N-channel TO-220F MOSFET

文件：494.13 Kbytes Page：5 Pages

N-channel Enhanced mode TO-220/TO-251/TO-251N/TO-252/TO-220F MOSFET

文件：724.48 Kbytes Page：7 Pages

N-channel Enhanced mode TO-263 MOSFET

文件：617 Kbytes Page：6 Pages

N-channel Enhanced mode TO-220F/TO-220SF/TO-251/ TO-252/TO-220 MOSFET

文件：991.14 Kbytes Page：7 Pages

高压MOSFET

高压MOSFET

N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET

文件：1.02449 Mbytes Page：7 Pages

7 Amps, 650 Volts 7 Amps, 650 Volts

DESCRIPTION The UTC 7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

650V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology.

650V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

650V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

650V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs