高压MOSFET

N-channel Enhanced mode TO-220F/TO-251N/TO-252/TO-251NX-S4 MOSFET

文件：735.64 Kbytes Page：6 Pages

N-channel Enhanced mode TO-251 MOSFET

文件：768.01 Kbytes Page：6 Pages

N-channel Enhanced mode TO-251/TO-251N-S2 MOSFET

文件：577.16 Kbytes Page：6 Pages

高压MOSFET

高压MOSFET

N-channel Enhanced mode TO-251N/TO-251N-S2/TO-220F/TO-220SF MOSFET

文件：725.44 Kbytes Page：6 Pages

N-channel MOSFET (TO-251 , TO-252)

文件：753.03 Kbytes Page：7 Pages

4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

650V N-Channel MOSFET

FEATURES ❐ Originative New Design ❐ Superior Avalanche Rugged Technology ❐ Robust Gate Oxide Technology ❐ Very Low Intrinsic Capacitances ❐ Excellent Switching Characteristics ❐ Unrivalled Gate Charge : 15 nC (Typ.) ❐ Extended Safe Operating Area ❐ Lower RDS(ON) : 2.3 Ω (Typ.) @VGS=10V ❐

N-channel MOSFET (TO-220F , TO-220)

文件：775.92 Kbytes Page：7 Pages

N-Channel Power MOSFET 3.9A, 650V, 3.0廓

文件：325 Kbytes Page：8 Pages