型号 功能描述 生产厂家 企业 LOGO 操作
SVSP7N60DD2TR

7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens

SILAN

士兰微

SVSP7N60DD2TR

7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens

SILAN

士兰微

SVSP7N60DD2TR

7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens

SILAN

士兰微

SVSP7N60DD2TR

7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens

SILAN

士兰微

SVSP7N60DD2TR

7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens

SILAN

士兰微

SVSP7N60DD2TR

7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens

SILAN

士兰微

7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens

SILAN

士兰微

7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens

SILAN

士兰微

更新时间:2025-12-22 13:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG/三星
24+
QFP48
12000
原装正品 有挂就有货
24+
N/A
80000
一级代理-主营优势-实惠价格-不悔选择
SILAN/士兰微
25+
TO-247-3L
10000
原装正品优势供应
SILAN(士兰微电子)
2511
5904
电子元器件采购降本30%!原厂直采,砍掉中间差价
SILAN/士兰微
21+
TO220
38000
SAMSUNG/三星
25+
QFP48
996880
只做原装,欢迎来电资询
SILAN
22+
PDFN8
621
原装
SAMSUNG/三星
23+
QFP48
98900
原厂原装正品现货!!
SAMSUNG
16+
QFP
1052
进口原装现货/价格优势!
SILAN/士兰微
25+
DFN
10000
原厂原装,价格优势

SVSP7N60DD2TR数据表相关新闻