位置：首页 > IC中文资料 > SVSP7N60DD2TR
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SVSP7N60DD2TR | 7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 |   | |
SVSP7N60DD2TR | 7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 | | |
SVSP7N60DD2TR | 7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 | | |
SVSP7N60DD2TR | 7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 | | |
SVSP7N60DD2TR | 7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 | | |
SVSP7N60DD2TR | 7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 | | |
7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 | | ||
7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SILAN/士兰微 |
25+ |
DFN |
10000 |
原厂原装,价格优势 |
|||
SAMSUNG |
25+ |
QFP |
6500 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
3M |
新 |
17 |
全新原装 货期两周 |
||||
SILAN/士兰微 |
22+ |
TO220 |
20000 |
只做原装 品质保障 |
|||
冠坤电子 |
21+ |
10mm*12.5mm |
13 |
只做原装鄙视假货15118075546 |
|||
SAMSUNG/三星 |
23+ |
QFP48 |
98900 |
原厂原装正品现货!! |
|||
SAMSUNG |
24+ |
QFP |
71 |
||||
SAMSUNG |
16+ |
QFP |
1052 |
进口原装现货/价格优势! |
|||
SILAN(士兰微电子) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
SILAN |
37 |
SVSP7N60DD2TR规格书下载地址
SVSP7N60DD2TR参数引脚图相关
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SVSP7N60DD2TR数据表相关新闻
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2019-11-11
DdatasheetPDF页码索引
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