位置：首页 > IC中文资料 > SVSP7N60DD2
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SVSP7N60DD2 | 7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 |   | |
SVSP7N60DD2 | Multi-Epi DPMOS | SILAN 士兰微 | | |
7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 | | ||
7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 | | ||
7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 | | ||
7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 | | ||
7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 | | ||
7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 | | ||
7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens | SILAN 士兰微 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SILAN/士兰微 |
25+ |
DFN |
10000 |
原厂原装,价格优势 |
|||
24+ |
N/A |
80000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
SAMSUNG |
24+ |
QFP |
71 |
||||
冠坤电子 |
21+ |
10mm*12.5mm |
13 |
只做原装鄙视假货15118075546 |
|||
3M |
2022+ |
13 |
全新原装 货期两周 |
||||
SAMSUNG/三星 |
25+ |
QFP48 |
996880 |
只做原装,欢迎来电资询 |
|||
SILAN/士兰微 |
25+ |
TO-247-3L |
10000 |
原装正品优势供应 |
|||
SILAN/士兰微 |
22+ |
TO220 |
20000 |
只做原装 品质保障 |
|||
23+ |
23 |
现货库存 |
|||||
SILAN/士兰微 |
25+ |
TO-252-2L |
188600 |
全新原厂原装正品现货 欢迎咨询 |
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SVSP7N60DD2规格书下载地址
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SVSP7N60DD2数据表相关新闻
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2019-11-11
DdatasheetPDF页码索引
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