型号 功能描述 生产厂家&企业 LOGO 操作
SVS24N60TD2

24A, 600V DP MOS POWER TRANSISTOR

GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit

SILAN

士兰微

SVS24N60TD2

24A, 600V DP MOS POWER TRANSISTOR

GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit

SILAN

士兰微

SVS24N60TD2

24A, 600V DP MOS POWER TRANSISTOR

GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit

SILAN

士兰微

SVS24N60TD2

24A, 600V DP MOS POWER TRANSISTOR

GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit

SILAN

士兰微

SVS24N60TD2

24A, 600V DP MOS POWER TRANSISTOR

GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit

SILAN

士兰微

SVS24N60TD2

24A, 600V DP MOS POWER TRANSISTOR

GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit

SILAN

士兰微

SVS24N60TD2

24A, 600V DP MOS POWER TRANSISTOR

GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit

SILAN

士兰微

SVS24N60TD2

24A, 600V DP MOS POWER TRANSISTOR

GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit

SILAN

士兰微

24A, 600V DP MOS POWER TRANSISTOR

GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit

SILAN

士兰微

更新时间:2025-8-13 10:34:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
士兰微
21+
DO-201AD
12500
S
TO-220F
22+
6000
十年配单,只做原装
士兰微
21+
4A 650V TO-220F-3L
817
原装现货
SILAN/士兰微
24+
65230
SILAN/士兰微
23+
TO-3P
50000
全新原装正品现货,支持订货
SILAN/士兰微
2023+
TO252
15000
原厂全新正品旗舰店优势现货
SILAN/士兰微
24+
TO-247
87500
专营SILAN士兰微原装保障
Silan
22+
TO-220F
25000
只做原装进口现货,专注配单
SL
23+
TO247
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
士兰微
24+
10000
原装现货

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