位置：首页 > IC中文资料 > SVS24N60TD2
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SVS24N60TD2 | 24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit | SILAN 士兰微 |   | |
SVS24N60TD2 | 24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit | SILAN 士兰微 | | |
SVS24N60TD2 | 24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit | SILAN 士兰微 | | |
SVS24N60TD2 | 24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit | SILAN 士兰微 | | |
SVS24N60TD2 | 24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit | SILAN 士兰微 | | |
SVS24N60TD2 | 24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit | SILAN 士兰微 | | |
SVS24N60TD2 | 24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit | SILAN 士兰微 | | |
SVS24N60TD2 | 24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit | SILAN 士兰微 | | |
SVS24N60TD2 | 超结MOS功率管 | SILAN 士兰微 | | |
24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit | SILAN 士兰微 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
士兰微 |
22+ |
DO-201AD |
20000 |
只做原装 品质保障 |
|||
SILAN/士兰微 |
21+ |
TO-3P |
880000 |
明嘉莱只做原装正品现货 |
|||
士兰微 |
24+ |
10000 |
原装现货 |
||||
士兰微 |
21+ |
DO-201AD |
12500 |
||||
S |
TO-220F |
22+ |
6000 |
十年配单,只做原装 |
|||
SL |
23+ |
TO247 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
SILAN/士兰微 |
23+ |
TO-3P |
50000 |
全新原装正品现货,支持订货 |
|||
SILAN/士兰微 |
24+ |
65230 |
|||||
SILAN/士兰微 |
24+ |
TO-247 |
87500 |
专营SILAN士兰微原装保障 |
|||
SILAN |
2450+ |
TO-247 |
9850 |
只做原装正品现货或订货假一赔十! |
SVS24N60TD2规格书下载地址
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SVS24N60TD2数据表相关新闻
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2019-11-11
DdatasheetPDF页码索引
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