GENERAL DESCRIPTION

SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high

voltage power MOSFET produced using Silan’s DP MOS technology. It

achieves low conduction loss and switching losses. It leads the design

engineers to their power converters with high efficiency, high power

density, and superior thermal behavior. Furthermore, it’s universal

applicable, for example. it is suitable for hard and soft switching

topologies.

FEATURES

 24A, 600V, RDS(on)(typ.)=0.14@VGS=10V

 New revolutionary high voltage technology

 Ultra low gate charge

 Periodic avalanche rated

 Extreme dv/dt rated

 High peak current capability