| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
5A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize | SILAN 士兰微 |   | ||
5A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize | SILAN 士兰微 | | ||
5A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize | SILAN 士兰微 | | ||
5A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize | SILAN 士兰微 | | ||
5A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize | SILAN 士兰微 | | ||
平面高压MOS功率管 | SILAN 士兰微 | | ||
平面高压MOS功率管 | SILAN 士兰微 | | ||
Power MOSFET 文件：1.07807 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
平面高压MOS功率管 | SILAN 士兰微 | | ||
Power MOSFET 文件：1.06956 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.09026 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
4.5 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching application | UTC 友顺 | | ||
4.5 Amps, 600/650 Volts N-CHANNEL MOSFET 文件：242.68 Kbytes Page：6 Pages | UTC 友顺 | | ||
5A, 600V N-CHANNEL POWER MOSFET 文件：254.02 Kbytes Page：6 Pages | UTC 友顺 | | ||
Power MOSFET 文件：1.06579 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-Channel Power MOSFET 文件：396.63 Kbytes Page：8 Pages | NELLSEMI 尼尔半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
士兰微 |
22+ |
TO-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
SILAN/士兰微 |
24+ |
TO-252 |
196000 |
专营SILAN士兰微原装保障 |
|||
SILAN/士兰微 |
20+ |
明嘉莱只做原装正品现货 |
2510000 |
TO-252-2L |
|||
SILAN |
25+23+ |
TO252 |
72361 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
SILAN/士兰微 |
25+ |
TO252 |
20300 |
SILAN/士兰微原装特价SVF5N60DTR即刻询购立享优惠#长期有货 |
|||
SILAN士兰微 |
24+ |
TO-252 |
25836 |
新到现货，只做全新原装正品 |
|||
SILAN/士兰微 |
23+ |
TO-252 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
SILAN/士兰微 |
2450+ |
SOT252 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
SILAN士兰微 |
24+ |
TO-252 |
20000 |
市场最低 原装现货 假一罚百 可开原型号 |
|||
SILAN士兰微 |
24+ |
TO-252 |
5000 |
全新原装正品,现货销售 |
SVF5N60规格书下载地址
SVF5N60参数引脚图相关
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- SVF-5W0-H
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- SVF-5W0-F
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- SVF5N60DTR
- SVF5N60D
- SVF-5D-SSLASHQ
- SVF-5D-SSLASHCE
- SVF-5D-S/Q
- SVF-5D-S/CE
- SVF-5D-S
- SVF-5D-RSLASHQ
- SVF-5D-RSLASHCE
- SVF-5D-R/Q
- SVF-5D-R/CE
- SVF-5D-R
- SVF-5D-JSLASHQ
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- SVF-5D-J
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- SVD201
- SVD102
- SVD101
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- SVC386
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- SVC384
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- SVC381
SVF5N60数据表相关新闻
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DdatasheetPDF页码索引
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