4A, 900V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF4N90F/MJ/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance

4A, 900V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF4N90F/MJ/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance

F-CellTM系列高压MOSFET

N-Channel QFET® MOSFET 900 V, 4.0 A, 4.2 Ω

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and hi

4 Amps, 900 Volts N-CHANNEL MOSFET

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4 Amps, 900 Volts N-CHANNEL POWER MOSFET

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Fast Switching Speed

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4.0A, 900V N-CHANNEL POWER MOSFET

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