14A, 250V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF14N25CD is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, pro

F-CellTM系列C版高压MOSFET

14A, 250V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF14N25CD is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, pro

14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching re

14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching re

N-Channel MOSFET 250V, 10.2A, 0.28(ohm)

General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low on state resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Featu

N-Channel MOSFET 250V, 10.2A, 0.28(ohm)

General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low on state resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Featu

Isc N-Channel MOSFET Transistor

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