2A, 600V NChannel MOSFET

GENERAL DESCRIPTION SVD2N60T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary SRin™ structure DMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to mini

2A, 600V N-Channel MOSFET

600V N-Channel Power MOSFET

Features ● RDS(ON)

2 Amps, 600 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power upplies, PWM

N2 Amps竊?00Volts N-Channel MOSFET

Description The ET2N60 N-Ceannel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. Features ● RDS(ON) = 5.00Ω@VGS = 10 V ● Low gate charge

2A 600V N-channel Enhancement Mode Power MOSFET

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