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Features: ● Low Gate Charge for Fast Switching Application ● Fast Switching ● 100% EAS Guaranteed ● Improved dv/dt Capability ● Green Device Available Description: These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. design to provide excel

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FEATURES - Glass passivated junction - Ideal for printed circuit board - Typical IR less than 0.1μA - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 defini

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