600 V, 1.0 A Ultrafast Rectifier

Features and Benefits • Ultrafast 35 Nanosecond Recovery Times • 175°C Operating Junction Temperature • High Temperature Glass Passivated Junction • High Voltage Capability to 600 V • NRVUHS and SURHS8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change R

封装/外壳：DO-214AA，SMB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GEN PURP 600V 1A SMB 分立半导体产品 二极管 - 整流器 - 单

Power Rectifier

Power Rectifier

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Power Rectifier

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600 V, 1.0 A Ultrafast Rectifier

Features and Benefits • Ultrafast 35 Nanosecond Recovery Times • 175°C Operating Junction Temperature • High Temperature Glass Passivated Junction • High Voltage Capability to 600 V • NRVUHS and SURHS8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change R

Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package

These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and po

Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package

These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and po

Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for

Surface Mount Ultrafast Power Rectifier

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Surface Mount Ultrafast Power Rectifier

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