isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 85A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) =3.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 85A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) =4.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel 40-V (D-S) 175C MOSFET

文件：69.59 Kbytes Page：5 Pages

N-Channel 40-V (D-S) 175C MOSFET

文件：58.6 Kbytes Page：5 Pages

N-Channel 40-V (D-S) 175C MOSFET

文件：58.6 Kbytes Page：5 Pages

85A, 40V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET

DESCRIPTION The UTC UTT85N04 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology. The UTC UTT85N04 is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched

40V N-CHANNEL ENHANCEMENT MODE MOSFET

Application Battery protection Load switch Uninterruptible power supply

N-Channel MOSFET uses advanced trench technology

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N-Channel Super Trench Power MOSFET

文件：532.2 Kbytes Page：5 Pages