N-ChannelEnhancement-ModeTransistors

文件：72.2 Kbytes Page：4 Pages

N-Channel60-V(D-S)175CMOSFET

文件：45.93 Kbytes Page：4 Pages

N-Channel60-V(D-S),175CMOSFET

文件：47.33 Kbytes Page：4 Pages

N-ChannelEnhancement-ModeTransistors

文件：72.2 Kbytes Page：4 Pages

N-Channel60V(D-S)MOSFET

文件：998.19 Kbytes Page：7 Pages

N-Channel60-V(D-S),175CMOSFET

文件：77.8 Kbytes Page：4 Pages

N-Channel60-V(D-S)MOSFET

FEATURES •175°CJunctionTemperature •TrenchFET®PowerMOSFET •Materialcategorization:

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,87A,RDS(ON)=12mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,87A,RDS(ON)=12mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

FastSwitchingSpeed

文件：65.68 Kbytes Page：2 Pages

N-Channel60-V(D-S)MOSFET

文件：1.27408 Mbytes Page：7 Pages