isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel 60-V (D-S) MOSFET

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N-Channel 60 V (D-S) MOSFET

N-Channel 60-V (D-S) MOSFET

文件：99.74 Kbytes Page：6 Pages

N-Channel 60-V (D-S) MOSFET

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N-Channel 60-V (D-S) MOSFET

N-Channel 60-V (D-S) MOSFET

文件：116.38 Kbytes Page：6 Pages

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM90N06Q uses advanced trench technology and design to provide excellent RDS(ON) with

Drain Current ?밒D= 90A@ TC=25C

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N-Channel Trench Power MOSFET

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N-Channel Super Trench Power MOSFET

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N-Channel MOSFET

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