isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.2mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel 30-V (D-S) MOSFET

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N-Channel 30 V (D-S) MOSFET

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N-Channel 30 V (D-S) MOSFET

N-Channel 30 V (D-S) MOSFET

文件：172.84 Kbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

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N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

30V N-Channel Trench MOSFET(Preliminary)

Features  Trench Power Technology  Low RDS(ON)  Low Gate Charge  Optimized for Fast-switching Applications Applications  Synchronous Rectification in DC/DC and AC/DC Converters  Isolated DC/DC Converters in Telecom and Industrial

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM90N03Q uses advanced trench technology and design to provide excellent RDS(ON) with

N-channel 30V - 0.005廓 - 80A - DPAK/IPAK STripFET??III Power MOSFET

Description This device utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved. General features ■ RDS(on)*Qg industry’s benchmark ■ Conduction losses reduce

N-Channel Enhancement Mode Field Effect Transistor

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