Current-Sensing Power MOSFETs

INTRODUCTION Vishay Siliconix current-sensing power MOSFETs offer a simple means of incorporating a protection feature into an electronic control circuit and avoiding catastrophic failures resulting from overcurrent (overload) and/or short-circuit conditions. The device package is a modified D2

N-Channel 75-V (D-S) MOSFET with Current Sensing Diode

MOSFET SPECIFICATIONS (TJ = 25 C UNLESS OTHERWISE NOTED)

文件：45.96 Kbytes Page：5 Pages

60 Amps, 80 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 60N08 is an N-channel power MOSFET adopting UTC’s advanced planar stripe and DMOS technology to provide designers with perfectly high switching speed and minimum on-state resistance. It also can withstand high energy pulse in the avalanche and commutation modes. The UTC 60N0

80V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V,ID@20A

80V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V,ID@20A

N-Channel Power MOSFET

文件：2.12736 Mbytes Page：5 Pages

N-Channel Enhancement Mode Power MOSFET

文件：897.8 Kbytes Page：7 Pages