N-Channel 80 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • Maximum 175 °C junction temperature • Very low Qgd reduces power loss from passing through Vplateau • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Power supply -

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) =3.2mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel 80 V (D-S) MOSFET

N-Channel 80 V (D-S) MOSFET

文件：191.34 Kbytes Page：10 Pages

N-Channel 80 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • Maximum 175 °C junction temperature • Very low Qgd reduces power loss from passing through Vplateau • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Power supply -

N-Channel 80 V (D-S) MOSFET

文件：191.34 Kbytes Page：10 Pages

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High-Precision Reset Voltage Detector

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