N-Channel 60 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • Maximum 175 °C junction temperature • Qgd/Qgs ratio

N-Channel 60 V (D-S) MOSFET

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.1mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel 60 V (D-S) MOSFET

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N-Channel 60 V (D-S) MOSFET

文件：185.73 Kbytes Page：9 Pages

N-Channel 60 V (D-S) MOSFET

文件：188.48 Kbytes Page：9 Pages

N-Channel 60 V (D-S) MOSFET

N-Channel 60 V (D-S) MOSFET

文件：188.48 Kbytes Page：9 Pages

500 Amp Rectifier 20 to 45 Volts Schottky Barrier

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

High Surge Capability

Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive

HIGH POWER -SCHOTTKY RECTIFIERS

Features • High Surge Capability • Types up to 100V VRRM

SCHOTTKY DIODES MODULE TYPE 500A

Features High Surge Capability Types Up to 45V VRRM

Silicon Power Schottky Diode

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