isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 40A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) =30mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel 30-V (D-S) 175C MOSFET

N-Channel 30-V (D-S) 175C MOSFET

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N-Channel 30-V (D-S) 175C MOSFET

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Low Gate Charge Simple Drive Requirement

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widely preferred for all commercial-industrial applications and suited for low voltage applica

N CHANNEL ENHANCEMENT MODE POWER MOSFET

Power MOSFETs from Silicon Standardprovide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widelypreferred for commercialand industrial applications and suited for low voltage applications su

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Gen III Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • DC/DC Conversion - System Power

N-Channel 30-V (D-S) MOSFET

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Fast Switching Characteristic

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