isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 9A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.27Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel 200 V (D-S) 175 °C MOSFET

N-Channel 200-V (D-S) 175 Degree Celcious MOSFET

文件：39.56 Kbytes Page：5 Pages

N-Channel 200-V (D-S), 175Celsius MOSFET

文件：193.69 Kbytes Page：4 Pages

N-Channel 200-V (D-S), 175Celsius MOSFET

文件：193.69 Kbytes Page：4 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for all commercial-industrial applications. ▼Simple Drive Requirement

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package is widely preferred for commercial-industrial through hole applications.

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widely preferred for commercial-industrial through-hole applications. ▼Simple Drive Re

Simple Drive Requirement Lower Gate Charge

Description AP09N20B series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-263

N-Channel MOSFET uses advanced trench technology

文件：827.99 Kbytes Page：5 Pages