isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 39A@ TC=25℃ ·Drain Source Voltage -VDSS= 20V(Min) ·Static Drain-Source On-Resistance -RDS(on) =3.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 37A@ TC=25℃ ·Drain Source Voltage -VDSS= 20V(Min) ·Static Drain-Source On-Resistance -RDS(on) =3.7mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS= 20V(Min) ·Static Drain-Source On-Resistance -RDS(on) =5.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel 20-V (D-S) 175 Degrees Celcious MOSFET

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N-Channel 20-V (D-S) 175C MOSFET

N-Channel 20-V (D-S) 175C MOSFET

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N-Channel 20-V (D-S) 175C MOSFET

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N-Channel 20-V (D-S) 175C MOSFET

N-channel 24V - 0.0068ohm - 60A - DPAK - IPAK STripFET TM III Power MOSFET

Description This series of products utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. Thisis suitable for the most demanding DC-DC converter application where high efficiency is to be achieved. ■ RDS(ON)* Qg industry’s benchmark ■ Conduction losses redu

N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET

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N - Channel Logic Level Enhancement Mode Field Effect Transistor

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