位置：首页 > IC中文资料第1105页 > SUD50N02-09P
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SUD50N02-09P | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 20V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 9.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 |   | |
SUD50N02-09P | N-Channel 20-V (D-S) 175 Degree Celcious MOSFET 文件：52.75 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
SUD50N02-09P | N-Channel 20-V (D-S), 175Celsius MOSFET 文件：197.91 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
N-Channel 20-V (D-S), 175Celsius MOSFET 文件：197.91 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
N-Channel 20-V (D-S) 175 Degree Celcious MOSFET 文件：52.75 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
N-Channel 20-V (D-S) 175 Degree Celcious MOSFET 文件：52.75 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |
SUD50N02-09P产品属性
- 类型
描述
- 型号
SUD50N02-09P
- 功能描述
MOSFET 20V 20A 6.5W
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
20+ |
TO-252 |
63258 |
原装优势主营型号-可开原型号增税票 |
|||
VISHAY/威世 |
04+ |
TO-252 |
197 |
||||
VISHAY |
1709+ |
SOT-252 |
32500 |
普通 |
|||
VISHAY |
25+23+ |
TO-252 |
28459 |
绝对原装正品全新进口深圳现货 |
|||
VISHAY/威世 |
24+ |
TO-252 |
197 |
只做原厂渠道 可追溯货源 |
|||
VISHAY |
24+ |
DPAK(TO-252) |
16800 |
绝对原装进口现货 假一赔十 价格优势!? |
|||
VISHAY/威世 |
23+ |
TO-252 |
30000 |
全新原装现货,价格优势 |
|||
VISHAY |
24+ |
TO252 |
11000 |
假一赔百原装正品价格优势实单可谈 |
|||
VISHAY/威世 |
24+ |
NA/ |
197 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
VISHAY |
TO252 |
53650 |
一级代理 原装正品假一罚十价格优势长期供货 |
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SUD50N02-09P规格书下载地址
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2019-3-9
DdatasheetPDF页码索引
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