位置：首页 > IC中文资料第1569页 > SUB85N02-03
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SUB85N02-03 | iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=85A@TC=25℃ ·DrainSourceVoltage-VDSS=20V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3mΩ(Max)@VGS=4.5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   |
SUB85N02-03 | N-Channel20-V(D-S)175DegreeCelciousMOSFET 文件：66.95 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 |  | |
N-Channel20-V(D-S)175DegreeCelciousMOSFET 文件：66.95 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=85A@TC=25℃ ·DrainSourceVoltage-VDSS=20V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3mΩ(Max)@VGS=4.5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-Channel20-V(D-S)175DegreeCelciousMOSFET 文件：66.95 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
SUB85N02-03产品属性
- 类型
描述
- 型号
SUB85N02-03
- 功能描述
MOSFET 20V 85A 250W
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
09+ |
TO263 |
3876 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY/威世 |
24+ |
NA/ |
4050 |
原厂直销,现货供应,账期支持! |
|||
VISHAY |
1822+ |
TO-263 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
VISHAY |
0324/0504 |
681 |
公司优势库存 热卖中! |
||||
VISHAY/威世 |
2223+ |
TO263 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
VISHAY |
25+23+ |
TO263 |
72418 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
VISHAY |
24+ |
D2PAK(TO-263) |
16800 |
绝对原装进口现货 假一赔十 价格优势!? |
|||
VISHAY/威世 |
22+ |
TO263 |
3000 |
原装正品,支持实单 |
|||
VISHAY |
2025+ |
TO263 |
4165 |
全新原厂原装产品、公司现货销售 |
|||
VISHAY |
24+ |
TO-263 |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
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SUB85N02-03规格书下载地址
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DdatasheetPDF页码索引
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