位置：首页 > IC中文资料第516页 > SUB75N03-04
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SUB75N03-04 | iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   |
SUB75N03-04 | N-Channel30-V(D-S),175CMOSFET 文件：41.9 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技威世科技半导体 |  | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-Channel30-V(D-S),175CMOSFET 文件：41.9 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
SUB75N03-04产品属性
- 类型
描述
- 型号
SUB75N03-04
- 功能描述
MOSFET 30V 75A 187W
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
NA/ |
8850 |
原厂直销,现货供应,账期支持! |
|||
24+ |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||||
VISHAY |
TO-263-3 |
440 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
||||
VISHAY/威世 |
22+ |
SOT263 |
100000 |
代理渠道/只做原装/可含税 |
|||
VISHAY/威世 |
25+ |
TO263 |
996880 |
只做原装,欢迎来电资询 |
|||
VISHAY |
24+ |
D2PAK(TO-263) |
16800 |
绝对原装进口现货 假一赔十 价格优势!? |
|||
VISHAY |
2018+ |
TO263 |
6528 |
只做原装正品假一赔十!只要网上有上百分百有库存放心 |
|||
VISHAY/威世 |
24+ |
TO263 |
39230 |
只做原装 公司现货库存 |
|||
VISHAY/威世 |
23+ |
TO263 |
98900 |
原厂原装正品现货!! |
|||
SILICONIX |
25+ |
D2PAK |
880000 |
明嘉莱只做原装正品现货 |
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SUB75N03-04规格书下载地址
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DdatasheetPDF页码索引
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