isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 45A@ TC=25℃ ·Drain Source Voltage- : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) =18mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

N-ChanneL 50-V (D-S) 175C MOSFET, Logic Level

N-Channel 50-V (D-S), 175
C MOSFET, Logic Level

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TMOS IV POWER FIELD EFFECT TRANSISTORS

TMOS IV Power Field Effect Transistors N-Channel Enhancement-Mode Silicon Gate

TMOS IV POWER FIELD EFFECT TRANSISTORS

TMOS IV Power Field Effect Transistors N-Channel Enhancement-Mode Silicon Gate

POWER MOS FIELD EFFECT TRANSISTORS

[GESS] N-Channel Enhancement-Mode Power Field-Effect Transistors The RFH45N05 and RFH45N06 are n-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-p

Power MOS Field-Effect Transistors

N-Channel Enhancement-Mode Power Field-Effect Transistors The RFH45N05 and RFH45N06 are n-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bip

Fast Switching

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