POWER MOS FIELD EFFECT TRANSISTORS

[GESS] N-Channel Enhancement-Mode Power Field-Effect Transistors The RFH45N05 and RFH45N06 are n-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-p

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 40mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

Power MOS Field-Effect Transistors

N-Channel Enhancement-Mode Power Field-Effect Transistors The RFH45N05 and RFH45N06 are n-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bip

N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS

TMOS IV POWER FIELD EFFECT TRANSISTORS

TMOS IV Power Field Effect Transistors N-Channel Enhancement-Mode Silicon Gate

TMOS IV POWER FIELD EFFECT TRANSISTORS

TMOS IV Power Field Effect Transistors N-Channel Enhancement-Mode Silicon Gate

Fast Switching

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