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STYN410

Discrete Thyristors(SCRs)

文件:193.83 Kbytes Page:2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

STYN410

晶闸管分立器件

SIRECTIFIER

矽莱克电子

晶闸管分立器件

SIRECTIFIER

矽莱克电子

Discrete Thyristors(SCRs)

文件:193.83 Kbytes Page:2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

PHILIPS

飞利浦

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

PHILIPS

飞利浦

5 AMPERE POWER TRANSISTOR NPN SILICON

High Voltage NPN Silicon Transistors . . . designed for medium to high voltage inverters, converters, regulators and switching circuits. • High Collector–Emitter Voltage — VCEO = 200 Volts • DC Current Gain Specified @ 1.0 and 2.5 Adc • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.8

MOTOROLA

摩托罗拉

POWER RECTIFIERS(4.0A,500-1000V)

MOSPEC

统懋

Fast Settling, Video Op Amp with Disable

文件:519.409 Kbytes Page:8 Pages

NSC

国半

STYN410产品属性

  • 类型

    描述

  • ITVM(A):

    6.4

  • IT@TC(°C):

    100

  • VDRM/VRRM(V):

    400

  • ITSM 45°C/10ms(A):

    105

  • VTO(V):

    0.85

  • rT(mΩ):

    40

  • dv/dt(V/μs):

    200

  • TVJM(°C):

    125

  • RthJC per chip(K/W):

    1.90

  • 封装外形:

    TO-220AB

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