High voltage fast-switching NPN power transistor

Description This device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Features ■ High volta

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：散装 描述：TRANS NPN 600V 1A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

High voltage fast-switching NPN power transistor

Surface Mount Schottky Barrier Diodes

REVERSE VOLTAGE 20-60 Volts FORWARD CURRENT 500 mAmpere Features: *Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. * For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228. * Low l

Single-Ended Cordsets

Basic features Approval/Conformity CE cULus EAC WEEE

0.5A Surface Mount Schottky Barrier Rectifiers

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0.5A Surface Mount Schottky Barrier Rectifiers

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0.5A Surface Mount Schottky Barrier Rectifiers

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